Defects in Crystalline and multi-crystalline Silicon Solar Cells
The efficiency of a solar cells is limited by defects and impurities Twidely present in commercial solar cells. The primary goal of materials research in photovoltaics is overcoming these lifetime-limiting defects, which include in multicrystalline solar cells: Grain boundaries, dislocations, and transition metals.
Useful information
The webinar offers comprehensive understanding on the origin of defect in crystalline and multicrystalline silicon including mechanisms of nucleation, multiplication and recovery during growth and cooling, and electrical response of the dislocations.
The webinar will summarize the main advantages and limitations of traditional analytical tools by focusing on photoluminescence imaging. This technique can characterize very small concentrations of impurities by offering high resolution quantitative images of interstitial iron or chromium
Agenda
Details
Topic 1: Impurities in Si and their impact on solar cell performance
Speakers : COLETTI Gianluca
The webinar is about the effect of impurities in crystalline silicon solar cells. In particular it will be presented the results of a model experiment where intentional and controlled contamination of multi-crystalline silicon ingots were carried out. The impurities were monitored from the crystallization to the manufacturing of solar cells. A physical model has been created as support to the data. The efficiency degradation curves as function of impurity concentrations for Fe, Cr, Ni, Cu and Ti are reported and discussed. The different effect on a state of the art and on an advance solar cell architecture is shown.
SOPHIA Research Infrastructure: ECN Characterization lab on cSi
no download available.
Topic 2.-Dislocations in multicrystalline silicon
Speakers : STOKKAN Gaute
The presentation will review properties of dislocations in silicon, particularly properties specifically related to multicrystalline silicon. These include mechanisms of nucleation, multiplication and recovery during growth and cooling, and electrical response of the dislocations. The focus will be both on own research and on the general understanding of the topic
SOPHIA Research Infrastructure: Defect delineation, EBSD, SEM, light microscope, TEM
Defect Imaging in Silicon Wafers
Speakers : SCHUBERT Martin
This webinar demonstrates how typically very small concentrations of impurities in silicon wafers can be measured by means of photoluminescence imaging. It is shown how quantitative images of interstitial iron or chromium for whole wafers and with high resolution can be obtained. Applications will be shown as well as an exciting extension of the concept to ultrahigh resolution measurements of interstitial chromium.
SOPHIA Research Infrastructure: Si Material_Wafer_Cell Imaging @ ISE
no download available.